A. Knauer

Advances in group III-nitride-based deep UV light-emitting diode technology

Michael Kneissl, Tim Kolbe, C.L. Chua et al. · Semiconductor Science and Technology · 2010 · 668 citations

White Oled, Ultraviolet Light, Electrical Engineering +10

Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes

Tim Kolbe, A. Knauer, C.L. Chua et al. · Applied Physics Letters · 2010 · 160 citations

Optical Materials, Engineering, Optical Polarization Characteristics +16

Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

Tim Wernicke, Lukas Schade, Carsten Netzel et al. · Semiconductor Science and Technology · 2012 · 141 citations

Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

Frank Mehnke, Christian Kühn, Martin Guttmann et al. · Applied Physics Letters · 2014 · 117 citations

Semiconductors, Electrical Engineering, Optical Materials +15

Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer

Oliver Hilt, Frank Brunner, E. Cho et al. · 2011 · 114 citations

Wide-bandgap Semiconductor, Carbon-doped Buffer, Electrical Engineering +11