Carsten Netzel

Suppression of Nonradiative Recombination by V-Shaped Pits in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>GaInN</mml:mi><mml:mo>/</mml:mo><mml:mi>GaN</mml:mi></mml:math>Quantum Wells Produces a Large Increase in the Light Emission Efficiency

A. Hangleiter, F. Hitzel, Carsten Netzel et al. · Physical Review Letters · 2005 · 399 citations

Engineering, Light Emission Efficiency, Semiconductor Nanostructures +22

Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

Tim Wernicke, Lukas Schade, Carsten Netzel et al. · Semiconductor Science and Technology · 2012 · 141 citations

Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates

Martin Martens, Frank Mehnke, Christian Kühn et al. · IEEE Photonics Technology Letters · 2014 · 106 citations

Aluminium Nitride, Optical Materials, Engineering +23

Towards understanding the emission efficiency of nitride quantum wells

A. Hangleiter, D. Fuhrmann, M. Grewe et al. · physica status solidi (a) · 2004 · 84 citations

Quantum Science, Photonics, Solid-state Lighting +14

Improved performance of UVC-LEDs by combination of high-temperature annealing and epitaxially laterally overgrown AlN/sapphire

Norman Susilo, Eviathar Ziffer, Sylvia Hagedorn et al. · Photonics Research · 2020 · 67 citations

Aluminium Nitride, Optical Materials, High-temperature Annealing +17