A. Hangleiter

Suppression of Nonradiative Recombination by V-Shaped Pits in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>GaInN</mml:mi><mml:mo>/</mml:mo><mml:mi>GaN</mml:mi></mml:math>Quantum Wells Produces a Large Increase in the Light Emission Efficiency

A. Hangleiter, F. Hitzel, Carsten Netzel et al. · Physical Review Letters · 2005 · 399 citations

Engineering, Light Emission Efficiency, Semiconductor Nanostructures +22

Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN

Jin Seo Im, A. Moritz, Friedrich W. Steuber et al. · Applied Physics Letters · 1997 · 221 citations

Wide-bandgap Semiconductor, Engineering, Hole Effective Mass +17

Enhancement of band-to-band Auger recombination by electron-hole correlations

A. Hangleiter, Rolf Häcker · Physical Review Letters · 1990 · 146 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

The role of piezoelectric fields in GaN-based quantum wells

A. Hangleiter, Jin Seo Im, H. Kollmer et al. · MRS Internet Journal of Nitride Semiconductor Research · 1998 · 143 citations · Full text

Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum-well lasers

Gregory D. Fuchs, C. Schiedel, A. Hangleiter et al. · Applied Physics Letters · 1993 · 131 citations

Phonon-assisted Auger Recombination, Photonics, Quantum Science +14