F. Hitzel

Suppression of Nonradiative Recombination by V-Shaped Pits in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>GaInN</mml:mi><mml:mo>/</mml:mo><mml:mi>GaN</mml:mi></mml:math>Quantum Wells Produces a Large Increase in the Light Emission Efficiency

A. Hangleiter, F. Hitzel, Carsten Netzel et al. · Physical Review Letters · 2005 · 399 citations

Engineering, Light Emission Efficiency, Semiconductor Nanostructures +22

Composition dependence of polarization fields in GaInN/GaN quantum wells

A. Hangleiter, F. Hitzel, S. Lahmann et al. · Applied Physics Letters · 2003 · 103 citations

Polarization Fields, Quantum Science, Stark Effect +12

Towards understanding the emission efficiency of nitride quantum wells

A. Hangleiter, D. Fuhrmann, M. Grewe et al. · physica status solidi (a) · 2004 · 84 citations

Quantum Science, Photonics, Solid-state Lighting +14

Deep-Subwavelength 2D Periodic Surface Nanostructures on Diamond by Double-Pulse Femtosecond Laser Irradiation

Matteo Mastellone, A. Bellucci, M. Girolami et al. · Nano Letters · 2021 · 79 citations

Engineering, Laser Applications, Periodic Surface Nanostructures +23

Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells

A. Hangleiter, Carsten Netzel, D. Fuhrmann et al. · The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics · 2007 · 22 citations · Full text

High Density, Quantum Science, Electrical Engineering +15