Joachim Wuerfl

Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate

Isabella Rossetto, Matteo Meneghini, Oliver Hilt et al. · IEEE Transactions on Electron Devices · 2016 · 155 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Matteo Meneghini, Oliver Hilt, Joachim Wuerfl et al. · Energies · 2017 · 147 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Reliability issues of GaN based high voltage power devices

Joachim Wuerfl, Eldad Bahat‐Treidel, Frank Brunner et al. · Microelectronics Reliability · 2011 · 57 citations

Reliability Issues, Electrical Engineering, Engineering +4

InP DHBT Process in Transferred-Substrate Technology With $f_{t}$ and $f_{\max}$ Over 400 GHz

T. Kraemer, Matthias Rudolph, Franz Josef Schmueckle et al. · IEEE Transactions on Electron Devices · 2009 · 29 citations

Electrical Engineering, Engineering, Rf Semiconductor +11

AlGaN/GaN HEMT based sensor and system for polar liquid detection

Nidhi Chaturvedi, Kuldip Singh, Pharyanshu Kachhawa et al. · Sensors and Actuators A Physical · 2019 · 24 citations

Electrical Engineering, Engineering, Applied Physics +4