Joel Wong

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

K. Shinohara, D. Regan, Yan Tang et al. · IEEE Transactions on Electron Devices · 2013 · 494 citations

Engineering, Electrical Engineering, Materials Science +17

Ultrahigh-Speed GaN High-Electron-Mobility Transistors With <inline-formula> <tex-math notation="LaTeX">$f_{T}/f_{\mathrm {max}}$ </tex-math></inline-formula> of 454/444 GHz

Yan Tang, K. Shinohara, D. Regan et al. · IEEE Electron Device Letters · 2015 · 297 citations

Engineering, Electrical Engineering, Materials Science +17

High frequency GaN HEMTs for RF MMIC applications

M. Micovic, David F. Brown, D. Regan et al. · 2016 · 94 citations

Engineering, Electrical Engineering, Materials Science +17

Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz f_T

Jeong‐Sun Moon, Bob Grabar, Joel Wong et al. · IEEE Electron Device Letters · 2021 · 93 citations

Engineering, Electrical Engineering, Materials Science +15

360 GHz f_MAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

Jeong‐Sun Moon, Joel Wong, Bob Grabar et al. · IEEE Electron Device Letters · 2020 · 82 citations

Engineering, Electrical Engineering, Materials Science +13