Concepedia

Bob Grabar

BG

9

Publications

316

Citations

9

H-Index

2017

Active since

Affiliations

HRL Laboratories (United States)(Current)

University of Notre Dame

Bob Grabar is an author at HRL Laboratories (United States) specializing in engineering, electrical engineering, and applied physics.

Top concepts

EngineeringElectrical EngineeringApplied PhysicsNanoelectronicsPower ElectronicsEnergy EfficiencyElectronic EngineeringPhysicsMicroelectronicsPower Electronic Devices

Publications per year

2017–2022

9

Publications

9

Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz f<sub>T</sub>

Jeong‐Sun Moon, Bob Grabar, Joel Wong et al. · IEEE Electron Device Letters · 2021 · 88 citations

Wide-bandgap Semiconductor, Electrical Engineering, Ga-polar Gan Devices +10

360 GHz f<sub>MAX</sub> Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

Jeong‐Sun Moon, Joel Wong, Bob Grabar et al. · IEEE Electron Device Letters · 2020 · 81 citations

Wide-bandgap Semiconductor, Electrical Engineering, Mmw Low-noise Applications +10

<i>W</i>-Band Graded-Channel GaN HEMTs With Record 45% Power-Added-Efficiency at 94 GHz

Jeong‐Sun Moon, Bob Grabar, Joel Wong et al. · IEEE Microwave and Wireless Technology Letters · 2022 · 50 citations

Wide-bandgap Semiconductor, Electrical Engineering, Peak Pae +10

GaN DHFETs Having 48% Power Added Efficiency and 57% Drain Efficiency at $V$ -Band

M. Micovic, David F. Brown, A. Kurdoghlian et al. · IEEE Electron Device Letters · 2017 · 27 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +15

Novel High-speed Linear GaN Technology with High Efficiency

Jeong‐Sun Moon, Joel Wong, Bob Grabar et al. · 2019 · 22 citations

Electrical Engineering, Engineering, Graded-channel Gan Hemts +8

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