Ka-Band LNA MMIC's Realized in Fmax > 580 GHz GaN HEMT Technology

Abstract

We report the first generation of GaN MMIC circuits that are based on the latest generation of (ft > 320 GHz and fmax > 580 GHz) [1] GaN Transistors. The reported broadband Ka-band (27 GHz - 40 GHz) GaN LNA MMIC's have Noise Figure (NF) as low as 1 dB measured at a frequency of 37 GHz, NF <; 2 dB with >24dB of gain across 28 GHz- 39.2 GHz frequency range, and a very broad range of usable DC bias conditions (Vd: 0.6V - 4V; Pdc: 5 mW- 310 mW). This is to the best of our knowledge the lowest NF reported for GaN LNA in this frequency band.