Shawn D. Burnham

Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency

K. Shinohara, D. Regan, A. Corrion et al. · 2011 · 95 citations

Semiconductors, Aggressive Lateral Scaling, Electrical Engineering +11

92–96 GHz GaN power amplifiers

M. Micovic, A. Kurdoghlian, A. Margomenos et al. · 2012 · 95 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

GaN Technology for E, W and G-Band Applications

A. Margomenos, A. Kurdoghlian, M. Micovic et al. · 2014 · 95 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Technology +11

High frequency GaN HEMTs for RF MMIC applications

M. Micovic, David F. Brown, D. Regan et al. · 2016 · 91 citations

Frequency Band, Wide-bandgap Semiconductor, Electrical Engineering +11

InN: A material with photovoltaic promise and challenges

Elaissa Trybus, Gon Namkoong, Walter Henderson et al. · Journal of Crystal Growth · 2006 · 88 citations

Materials Science, Electrical Engineering, Engineering +9