Statistics
Publications
28
Citations
1.4K
H-Index
23
Active since
2005
Shawn D. Burnham is an author at HRL Laboratories (United States) specializing in materials science, engineering, and semiconductor devices.
Publications per year
2005–2017
28
28
Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency
K. Shinohara, D. Regan, A. Corrion et al. · 2011 · 98 citations
92–96 GHz GaN power amplifiers
M. Micovic, A. Kurdoghlian, A. Margomenos et al. · 2012 · 95 citations
GaN Technology for E, W and G-Band Applications
A. Margomenos, A. Kurdoghlian, M. Micovic et al. · 2014 · 95 citations
High frequency GaN HEMTs for RF MMIC applications
M. Micovic, David F. Brown, D. Regan et al. · 2016 · 94 citations
InN: A material with photovoltaic promise and challenges
Elaissa Trybus, Gon Namkoong, Walter Henderson et al. · Journal of Crystal Growth · 2006 · 88 citations
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