Growth and characterization of In-based nitride compounds

Defects in epitaxial multilayers I. Misfit dislocations

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Interaction of Ga and As2 Molecular Beams with GaAs Surfaces

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High-Quality InGaN Films Grown on GaN Films

Shuji Nakamura Shuji Nakamura, Takashi Mukai · Japanese Journal of Applied Physics · 1992 · 255 citations

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Wide-gap semiconductor InGaN and InGaAln grown by MOVPE

Takashi Matsuoka, Naoto Yoshimoto, T. Sasaki et al. · Journal of Electronic Materials · 1992 · 254 citations

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Fundamental absorption edge in GaN, InN and their alloys

Kōzō Osamura, Kazuo Nakajima, Yôtaro Murakami et al. · Solid State Communications · 1972 · 176 citations

Physics, Applied Physics, Gan Power Device +2