Wide-gap semiconductor InGaN and InGaAln grown by MOVPE

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Hiroshi Amano, Nobuhiko Sawaki, Isamu Akasaki et al. · Applied Physics Letters · 1986 · 2.2K citations

Engineering, Materials Engineering, Materials Science +17

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 2K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Crystallographic Polarity of ZnO Crystals

Anthony N. Mariano, R. E. Hanneman · Journal of Applied Physics · 1963 · 315 citations

Natural Sciences, Materials Engineering, Materials Science +14

Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy

Naoto Yoshimoto, Takashi Matsuoka, T. Sasaki et al. · Applied Physics Letters · 1991 · 253 citations · Full text

Engineering, Materials Engineering, Materials Science +15

Fundamental absorption edge in GaN, InN and their alloys

Kōzō Osamura, Kazuo Nakajima, Yôtaro Murakami et al. · Solid State Communications · 1972 · 178 citations

Natural Sciences, Materials Science, Physics +12