S. F. LeBoeuf

Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes

X. A. Cao, E. B. Stokes, Peter M. Sandvik et al. · IEEE Electron Device Letters · 2002 · 240 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan/ingan Multiple Quantum +14

Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses

X. A. Cao, Peter M. Sandvik, S. F. LeBoeuf et al. · Microelectronics Reliability · 2003 · 143 citations

Wide-bandgap Semiconductor, Electrical Engineering, Defect Generation +8

Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes

X. A. Cao, S. F. LeBoeuf, L.B. Rowland et al. · Applied Physics Letters · 2003 · 124 citations

Engineering, Green Leds, Optoelectronic Devices +19

High optical quality AlInGaN by metalorganic chemical vapor deposition

M. E. Aumer, S. F. LeBoeuf, F. G. McIntosh et al. · Applied Physics Letters · 1999 · 101 citations · Full text

Materials Engineering, Materials Science, Aluminium Nitride +14

Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates

X. A. Cao, S. F. LeBoeuf, Mark P. D’Evelyn et al. · Applied Physics Letters · 2004 · 98 citations

Uv Leds, Electrical Engineering, Solid-state Lighting +12