S. F. LeBoeuf - Concepedia

Concepedia

Author

S. F. LeBoeuf

General Electric (United States)

Also Known As

S. F. LeBoeuf, S. F. Leboeuf, S. LeBoeuf, S.F LeBoeuf, S.F. LeBoeuf, Stephen F. LeBoeuf, Stephen LeBoeuf

42

Publications

1.3K

Citations

17

H-Index

32

Concepts

All Affiliations

General Electric (United States)GE Global Research (United States)North Carolina State University Kansas State University American Xtal Technology (United States)

SF

About

S. F. LeBoeuf is an author at General Electric (United States) specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	21	1.3K
2	Applied Physics	17	21	1.3K
3	Electrical Engineering	13	14	979
4	Materials Engineering	2	2	113
5	Chemistry	1	1	101

S. F. LeBoeuf

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21

Publications

1.3K

Citations

17

H-Index

	Year	Citations
Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes X. A. Cao, E. B. Stokes, Peter M. Sandvik, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringGan/ingan Multiple QuantumEngineeringSolid-state Lighting	2002	240
Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses X. A. Cao, Peter M. Sandvik, S. F. LeBoeuf, Microelectronics Reliability Wide-bandgap SemiconductorElectrical EngineeringDefect GenerationEngineeringSolid-state Lighting	2003	143
Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes X. A. Cao, S. F. LeBoeuf, L.B. Rowland, Applied Physics Letters EngineeringGreen LedsOptoelectronic DevicesSemiconductorsLight-emitting Diodes	2003	124
High optical quality AlInGaN by metalorganic chemical vapor deposition M. E. Aumer, S. F. LeBoeuf, F. G. McIntosh, Applied Physics Letters Materials EngineeringMaterials ScienceAluminium NitrideOptical MaterialsAlingan Films	1999	101
Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates X. A. Cao, S. F. LeBoeuf, Mark P. D’Evelyn, Applied Physics Letters Uv LedsElectrical EngineeringSolid-state LightingGrown LedsEngineering	2004	98
Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures M. E. Aumer, S. F. LeBoeuf, S. M. Bedair, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesLuminescence PropertyAlingan/in0.08ga0.92n Quantum Wells	2000	95
Growth and characterization of GaN PiN rectifiers on free-standing GaN X. A. Cao, Hai Lu, S. F. LeBoeuf, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2005	61
Temperature-dependent electroluminescence of AlGaN-based UV LEDs X. A. Cao, S. F. LeBoeuf, Thomas Stecher IEEE Electron Device Letters Materials ScienceUv LedsElectrical EngineeringOptical MaterialsEngineering	2006	59
Effects of plasma treatment on the Ohmic characteristics of Ti∕Al∕Ti∕Au contacts to n-AlGaN X. A. Cao, S. F. LeBoeuf, J. Li, Applied Physics Letters Materials ScienceOhmic CharacteristicsElectrical EngineeringSurface ConductivityEngineering	2006	55
Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells M. E. Aumer, S. F. LeBoeuf, Baxter Moody, Applied Physics Letters Wide-bandgap SemiconductorEngineeringLight Emission EnergyPiezoelectric FieldAlingan/ingan Quantum Wells	2001	54

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