G. D. Via - Concepedia

Author

G. D. Via

United States Air Force Research Laboratory

Also Known As

G. D. VIA, G. D. Via, G. David Via, G. Via, G.D Via, G.D. Via, GLEN D. VIA, Glen D Via, Glen D. Via, Glen David Via

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

United States Air Force Research Laboratory Wright-Patterson Air Force Base University of Florida Wyle (United States)The Ohio State University

About

G. D. Via is an author at United States Air Force Research Laboratory specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	37	1.7K
2	Applied Physics	24	36	1.6K
3	Electrical Engineering	24	36	1.6K
4	Materials Engineering	3	3	179
5	Computer Engineering	1	1	49

G. D. Via

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices Gregg H. Jessen, Robert Fitch, J. Gillespie, IEEE Transactions on Electron Devices SemiconductorsWide-bandgap SemiconductorElectrical EngineeringGate LengthEngineering	2007	324
High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier Antonio Crespo, Mark Bellot, Kelson D. Chabak, IEEE Electron Device Letters Alinn/gan HemtMaximum Extrinsic TransconductanceElectrical EngineeringSub XmlnsEngineering	2009	105
Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz Pane-Chane Chao, Kenneth K. Chu, Carlton Creamer, IEEE Transactions on Electron Devices Gan-on-diamond HemtsWide-bandgap SemiconductorElectrical EngineeringEngineeringRf Semiconductor	2015	97
Wet Chemical Digital Etching of GaAs at Room Temperature G. DeSalvo, C. Bozada, J. Ebel, Journal of The Electrochemical Society SemiconductorsRoom TemperatureElectrical EngineeringEngineeringMicrofabrication	1996	86
Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates Kelson D. Chabak, J. Gillespie, V. Miller, IEEE Electron Device Letters Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringCvd Diamond Substrates	2009	67
Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates N. Killat, James W. Pomeroy, T. Paskova, IEEE Electron Device Letters Wide-bandgap SemiconductorEngineeringMicro-raman ThermographyBulk GanSemiconductors	2012	65
Implementation of High-Power-Density <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula>-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process Robert Fitch, Dennis E. Walker, Andrew J. Green, IEEE Electron Device Letters Wide-bandgap SemiconductorMicrowave CircuitsElectrical EngineeringEngineeringRf Semiconductor	2015	64
Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors Aaron R. Arehart, A. Sasikumar, Siddharth Rajan, Solid-State Electronics Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorApplied Physics	2012	60
AlGaN/GaN HEMT on Diamond Technology Demonstration Gregg H. Jessen, J. Gillespie, G. D. Via, Wide-bandgap SemiconductorElectrical EngineeringEngineeringCvd Diamond SubstrateHeat Extraction	2006	60
A Decomposition Workflow for Integrated Circuit Verification and Validation Adam Kimura, Jon Scholl, James Schaffranek, Journal of Hardware and Systems Security Hardware SecurityEngineeringVerificationComputer EngineeringComputer Architecture	2020	49

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