G. D. Via

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

Gregg H. Jessen, Robert Fitch, J. Gillespie et al. · IEEE Transactions on Electron Devices · 2007 · 324 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

Antonio Crespo, Mark Bellot, Kelson D. Chabak et al. · IEEE Electron Device Letters · 2009 · 105 citations

Alinn/gan Hemt, Maximum Extrinsic Transconductance, Electrical Engineering +13

Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

Pane-Chane Chao, Kenneth K. Chu, Carlton Creamer et al. · IEEE Transactions on Electron Devices · 2015 · 97 citations

Gan-on-diamond Hemts, Wide-bandgap Semiconductor, Electrical Engineering +13

Wet Chemical Digital Etching of GaAs at Room Temperature

G. DeSalvo, C. Bozada, J. Ebel et al. · Journal of The Electrochemical Society · 1996 · 86 citations

Semiconductors, Room Temperature, Electrical Engineering +12

Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates

Kelson D. Chabak, J. Gillespie, V. Miller et al. · IEEE Electron Device Letters · 2009 · 67 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +12