Pane-Chane Chao

Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

Pane-Chane Chao, Kenneth K. Chu, Carlton Creamer et al. · IEEE Transactions on Electron Devices · 2015 · 100 citations

Engineering, Electrical Engineering, Materials Science +17

Broad-band HBT BPSK and IQ modulator MMICs and millimeter-wave vector signal characterization

Hong‐Yeh Chang, Tian‐Wei Huang, Huei Wang et al. · IEEE Transactions on Microwave Theory and Techniques · 2004 · 45 citations

Engineering, Electrical Engineering, Microelectronics +16

A 1-17-GHz InGaP-GaAs HBT MMIC analog multiplier and mixer with broad-band input-matching networks

Bosen Tzeng, Chun-Hsien Lien, Huei Wang et al. · IEEE Transactions on Microwave Theory and Techniques · 2002 · 42 citations

Engineering, Electrical Engineering, Microelectronics +16

Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K

M.W. Pospieszalski, S. Weinreb, Pane-Chane Chao et al. · IEEE Transactions on Electron Devices · 1986 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

0.2-$\mu{\rm m}$ AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition ${\rm Al}_{2}{\rm O}_{3}$ Passivation

D. Xu, Kanin Chu, José Díaz et al. · IEEE Electron Device Letters · 2013 · 35 citations

Engineering, Electrical Engineering, Materials Science +17