Carlton Creamer

Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

Pane-Chane Chao, Kenneth K. Chu, Carlton Creamer et al. · IEEE Transactions on Electron Devices · 2015 · 97 citations

Gan-on-diamond Hemts, Wide-bandgap Semiconductor, Electrical Engineering +13

0.1-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> Atomic Layer Deposition Al<sub>2</sub>O<sub>3</sub> Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers

D. Xu, Kuo-Hsiung Chu, José Díaz et al. · IEEE Electron Device Letters · 2015 · 34 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +15

GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz

P.C. Chao, Kanin Chu, José Díaz et al. · MRS Advances · 2016 · 34 citations

Gan-on-diamond Hemts, Electrical Engineering, Engineering +4

Thermal Modeling of High Power GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process

Kenneth K. Chu, Thomas Yurovchak, P.C. Chao et al. · 2013 · 23 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +15

High-Performance GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process

Kenneth K. Chu, P.C. Chao, José Díaz et al. · 2015 · 17 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11