L.L. Pond

4H-SiC MESFET with 65.7% power added efficiency at 850 MHz

Karen Moore, C.E. Weitzel, Kevin J. Nordquist et al. · IEEE Electron Device Letters · 1997 · 51 citations

Engineering, Electrical Engineering, Microelectronics +16

Evaluation of AlGaN-GaN HFETs up to 750°C

I. Daumiller, C. Kirchner, K. Kamp et al. · 2002 · 24 citations

Engineering, Electrical Engineering, Materials Science +16

Effect of Device Temperature on RF FET Power Density

C.E. Weitzel, L.L. Pond, Karen Moore et al. · Materials science forum · 1998 · 18 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

High-temperature performance of GaAs-based HFET structure containing LT-AlGaAs and LT-GaAs

P. Schmid, K. Lipka, J. P. Ibbetson et al. · IEEE Electron Device Letters · 1998 · 11 citations

Engineering, Electrical Engineering, Materials Science +17