2002 · 24 citations · 2 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDopingSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesHigh-temperature Device OperationHigh-temperature ElectronicsSchottky BarriersSchottky Contacts
GaN based FET structures offer the potential of high speed, high power and high temperature operation beyond that of GaAs based FET devices, which have been operated up to 500°C. Here, operation of a Si-doped channel AlGaN-GaN HFET up to 750°C in vacuum is evaluated. Specifically, three parts of the device structure were evaluated: (a) the Schottky contact, (b) the active channel region with its channel sheet charge, and (c) the buffer layer.
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