Statistics
Publications
31
Citations
997
H-Index
18
Active since
1994
Kevin J. Nordquist is an author at Motorola (United States) specializing in engineering, microfabrication, and applied physics.
Publications per year
1994–2008
31
31
4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz
C.E. Weitzel, John W. Palmour, C.H. Carter et al. · IEEE Electron Device Letters · 1994 · 83 citations
4H-SiC MESFET with 65.7% power added efficiency at 850 MHz
Karen Moore, C.E. Weitzel, Kevin J. Nordquist et al. · IEEE Electron Device Letters · 1997 · 51 citations
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