IEEE Electron Device Letters · 1981 · 14 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationHigh-frequency Semiconductor DevicesSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesGallium Arsenide Field-effect TransistorsGallium Nitride Power DevicesPower OutputPower Output Capability
GaAs power FETs with output powers per unit gate width up to 1.4 W/mm have been fabricated. The factors contributing to this high output power are discussed.
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Control of gate—Drain avalanche in GaAs MESFET's
S. H. Wemple, W.C. Niehaus, H. M. Cox et al. · IEEE Transactions on Electron Devices · 1980 · 130 citations