W.C. Niehaus

Control of gate—Drain avalanche in GaAs MESFET's

S. H. Wemple, W.C. Niehaus, H. M. Cox et al. · IEEE Transactions on Electron Devices · 1980 · 130 citations

Engineering, Electrical Engineering, Microelectronics +12

Nonalloyed and <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> Ohmic contacts to highly doped <i>n</i>-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors

J.V. DiLorenzo, W.C. Niehaus, A. Y. Cho · Journal of Applied Physics · 1979 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

Low-noise and high-power GaAs microwave field-effect transistors prepared by molecular beam epitaxy

A. Y. Cho, J.V. DiLorenzo, B.S. Hewitt et al. · Journal of Applied Physics · 1977 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Double-drift IMPATT diodes near 100 GHz

W.C. Niehaus, Thomas E. Seidel, D.E. Iglesias · IEEE Transactions on Electron Devices · 1973 · 33 citations

Engineering, Electrical Engineering, Microelectronics +13

Reliability of power GaAs field-effect transistors

H. Fukui, S. H. Wemple, J.C. Irvin et al. · IEEE Transactions on Electron Devices · 1982 · 31 citations

Engineering, Electrical Engineering, Materials Science +17