J.V. DiLorenzo - Concepedia

Author

J.V. DiLorenzo

Also Known As

J. DiLorenzo, J. V. DILORENZO, J. V. DiLorenzo, J. V. Dilorenzo, J.V. DiLorenzo, J.V. Dilorenzo, James Dilorenzo, James V. DiLorenzo

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

Yale University

About

J.V. DiLorenzo is an author at Yale University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	24	989
2	Applied Physics	16	22	1K
3	Chemistry	3	3	134
4	Natural Sciences	1	1	38
5	Chemical Engineering	1	1	30

J.V. DiLorenzo

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Polariton Reflectance and Photoluminescence in High-Purity GaAs D. D. Sell, S. E. Stokowski, R. Dingle, Physical review. B, Solid state PhotonicsOptical MaterialsEngineeringPhotoluminescencePhysics	1973	309
Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layers J.V. DiLorenzo Journal of Crystal Growth Epitaxial GrowthPhysicsApplied PhysicsEpitaxial GaasEpitaxial Layers	1972	134
Control of gate&#8212;Drain avalanche in GaAs MESFET's S. H. Wemple, W.C. Niehaus, H. M. Cox, IEEE Transactions on Electron Devices	1980	130
Effects of the AsCl[sub 3] Mole Fraction on the Incorporation of Germanium, Silicon, Selenium, and Sulfur into Vapor Grown Epitaxial Layers of GaAs J.V. DiLorenzo, George E. Moore Journal of The Electrochemical Society SemiconductorsElectrical EngineeringHydrogen Chloride PressureEngineeringCrystalline Defects	1971	66
Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutions S. H. Wemple, W.C. Niehous, H. Fukui, IEEE Transactions on Electron Devices EngineeringBurnout PowerBurnout PrecursorsPower ElectronicsSemiconductor Device	1981	64
Observation of Polaritons in GaAs: A New Interpretation of the Free-Exciton Reflectance and Luminescence D. D. Sell, R. Dingle, S. E. Stokowski, Physical Review Letters EngineeringSemiconductorsIi-vi SemiconductorPolariton DynamicOptical Properties	1971	59
GaAs Power MESFET's: Design, Fabrication, and Performance J.V. DiLorenzo, W.R. Wisseman IEEE Transactions on Microwave Theory and Techniques Operating PrinciplesElectrical EngineeringEngineeringPower DeviceNanoelectronics	1979	50
Nonalloyed and <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> Ohmic contacts to highly doped <i>n</i>-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors J.V. DiLorenzo, W.C. Niehaus, A. Y. Cho Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesEngineering	1979	39
Chlorine and Antimony Nuclear Quadrupole Resonance in SbCl5CH3CN, SbCl5POCl3, and SbCl5 Robert F. Schneider, J.V. DiLorenzo The Journal of Chemical Physics Inorganic ChemistryEngineeringSb ResonancesPhysicsTheoretical Inorganic Chemistry	1967	38
Electrolytic etching and electron mobility of GaAs for FET's D. L. Rode, B. Schwartz, J.V. DiLorenzo Solid-State Electronics Electrical EngineeringEngineeringApplied PhysicsElectrolytic EtchingSemiconductor Device	1974	38

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