J.V. DiLorenzo

Polariton Reflectance and Photoluminescence in High-Purity GaAs

D. D. Sell, S. E. Stokowski, R. Dingle et al. · Physical review. B, Solid state · 1973 · 309 citations

Photonics, Optical Materials, Engineering +14

Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layers

J.V. DiLorenzo · Journal of Crystal Growth · 1972 · 134 citations

Epitaxial Growth, Physics, Applied Physics +5

Control of gate—Drain avalanche in GaAs MESFET's

S. H. Wemple, W.C. Niehaus, H. M. Cox et al. · IEEE Transactions on Electron Devices · 1980 · 130 citations

Effects of the AsCl[sub 3] Mole Fraction on the Incorporation of Germanium, Silicon, Selenium, and Sulfur into Vapor Grown Epitaxial Layers of GaAs

J.V. DiLorenzo, George E. Moore · Journal of The Electrochemical Society · 1971 · 66 citations

Semiconductors, Electrical Engineering, Hydrogen Chloride Pressure +12

Long-term and instantaneous burnout in GaAs power FET's: Mechanisms and solutions

S. H. Wemple, W.C. Niehous, H. Fukui et al. · IEEE Transactions on Electron Devices · 1981 · 64 citations

Engineering, Burnout Power, Burnout Precursors +16