J. Kretchmer - Concepedia

Concepedia

Author

J. Kretchmer

General Electric (United States)

Also Known As

J Kretchmer, J. Kretchmer, J. W. Kretchmer, J.W. Kretchmer, Jim Kretchmer

47

Publications

1.6K

Citations

24

H-Index

41

Concepts

All Affiliations

General Electric (United States)Rensselaer Polytechnic Institute GE Global Research (United States)Oak Ridge National Laboratory United States Naval Research Laboratory

JK

About

J. Kretchmer is an author at General Electric (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	27	1.5K
2	Applied Physics	20	22	1.3K
3	Electrical Engineering	18	20	1.3K
4	Materials Engineering	7	7	261
5	Education	1	1	24

J. Kretchmer

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29

Publications

1.6K

Citations

24

H-Index

	Year	Citations
Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes X. A. Cao, E. B. Stokes, Peter M. Sandvik, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringGan/ingan Multiple QuantumEngineeringSolid-state Lighting	2002	240
Silicon carbide UV photodiodes D.M. Brown, E. Downey, M. Ghezzo, IEEE Transactions on Electron Devices Electrical EngineeringPhotoelectric SensorEngineeringPhotochemistryPhotodetectors	1993	162
A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications Ahmed Elasser, M.H. Kheraluwala, M. Ghezzo, IEEE Transactions on Industry Applications Electrical EngineeringEngineeringPower DeviceEnergy EfficiencySic Diodes	2003	139
Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates X. A. Cao, S. F. LeBoeuf, Mark P. D’Evelyn, Applied Physics Letters Uv LedsElectrical EngineeringSolid-state LightingGrown LedsEngineering	2004	98
Silicon carbide MOSFET technology D.M. Brown, E. Downey, M. Ghezzo, Solid-State Electronics Electrical EngineeringEngineeringPower Semiconductor DeviceMicroelectronicsCarbide	1996	78
Nitrogen-implanted SiC diodes using high-temperature implantation M. Ghezzo, D.M. Brown, E. Downey, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringApplied Physics	1992	71
SiC MOS interface characteristics D.M. Brown, M. Ghezzo, J. Kretchmer, IEEE Transactions on Electron Devices Materials ScienceElectrical EngineeringEngineeringSi MosSic/sio/sub 2/	1994	70
Phosphorus and boron implantation in 6H–SiC Mulpuri V. Rao, Jason A. Gardner, P. H., Journal of Applied Physics Materials EngineeringMaterials ScienceB ImplantsRange StatisticsEngineering	1997	52
Characterization of phosphorus implantation in 4H-SiC V. Khemka, R. N. Patel, N. Ramungul, Journal of Electronic Materials Materials EngineeringMaterials ScienceEngineeringApplied PhysicsPhosphorene	1999	52
Microwave power SiC MESFETs and GaN HEMTs A.P. Zhang, L.B. Rowland, E.B. Kaminsky, Solid-State Electronics Electrical EngineeringGan HemtsEngineeringRf SemiconductorApplied Physics	2003	49

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