Silicon carbide UV photodiodes

Abstract

SiC photodiodes were fabricated using 6 H single-crystal wafers. These devices have excellent UV responsivity characteristics and very low dark current even at elevated temperatures. The reproducibility is excellent and the characteristics agree with theoretical calculations for different device designs. The advantages of these diodes are that they will operate at high temperatures and are responsive between 200 and 400 nm and not responsive to longer wavelengths because of the wide 3-eV bandgap. The responsivity at 270 nm is between 70% and 85%. Dark-current levels have been measured as a function of temperature that are orders of magnitude below those previously reported. Thus, these diodes can be expected to have excellent performance characteristics for detection of low light level UV even at elevated temperatures.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>