M. Ghezzo - Concepedia

Author

M. Ghezzo

General Electric (United States)

Also Known As

M Ghezzo, M. GHEZZO, M. Ghezzo, Mario Ghezzo

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

General Electric (United States)Rensselaer Polytechnic Institute United States Naval Research Laboratory George Mason University Oak Ridge National Laboratory

About

M. Ghezzo is an author at General Electric (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	43	1.6K
2	Applied Physics	22	35	1.4K
3	Health Sciences	1	1	15
4	Natural Sciences	1	1	72
5	Chemical Engineering	1	1	48

M. Ghezzo

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
Silicon carbide UV photodiodes D.M. Brown, E. Downey, M. Ghezzo, IEEE Transactions on Electron Devices Electrical EngineeringPhotoelectric SensorEngineeringPhotochemistryPhotodetectors	1993	162
A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications Ahmed Elasser, M.H. Kheraluwala, M. Ghezzo, IEEE Transactions on Industry Applications Electrical EngineeringEngineeringPower DeviceEnergy EfficiencySic Diodes	2003	139
Al and B ion-implantations in 6H- and 3C-SiC Mulpuri V. Rao, Peter R. Griffiths, O. W. Holland, Journal of Applied Physics Materials ScienceMaterials EngineeringB ImplantsIon ImplantationHigh Temperature Materials	1995	115
SiC Power Devices T. Paul Chow, M. Ghezzo MRS Proceedings Electrical EngineeringEngineeringPower DevicePower DevicesSic Power Devices	1996	97
Silicon carbide MOSFET technology D.M. Brown, E. Downey, M. Ghezzo, Solid-State Electronics Electrical EngineeringEngineeringPower Semiconductor DeviceMicroelectronicsCarbide	1996	78
Diffusivity Summary of B, Ga, P, As, and Sb in SiO[sub 2] M. Ghezzo, D.M. Brown Journal of The Electrochemical Society PhysicsNatural SciencesParticle PhysicsNon-perturbative QcdDiffusivity Summary	1973	72
Nitrogen-implanted SiC diodes using high-temperature implantation M. Ghezzo, D.M. Brown, E. Downey, IEEE Electron Device Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringApplied Physics	1992	71
SiC MOS interface characteristics D.M. Brown, M. Ghezzo, J. Kretchmer, IEEE Transactions on Electron Devices Materials ScienceElectrical EngineeringEngineeringSi MosSic/sio/sub 2/	1994	70
Phosphorus and boron implantation in 6H–SiC Mulpuri V. Rao, Jason A. Gardner, P. H., Journal of Applied Physics Materials EngineeringMaterials ScienceB ImplantsRange StatisticsEngineering	1997	52
Characterization of phosphorus implantation in 4H-SiC V. Khemka, R. N. Patel, N. Ramungul, Journal of Electronic Materials Materials EngineeringMaterials ScienceEngineeringApplied PhysicsPhosphorene	1999	52

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