J. A. Edmond

Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide

R. F. Davis, G. Kelner, M. S. Shur et al. · Proceedings of the IEEE · 1991 · 404 citations

Engineering, Monocrystalline Alpha, Silicon Carbide +20

Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

R. F. Davis, Zlatko Sitar, B. Williams et al. · Materials Science and Engineering B · 1988 · 235 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +8

Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates

W. C. Hughes, W. H. Rowland, Mark A. Johnson et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1995 · 188 citations

Materials Science, Gan Film Quality, Electrical Engineering +13

6H-silicon carbide devices and applications

John W. Palmour, J. A. Edmond, Hoyoul Kong et al. · Physica B Condensed Matter · 1993 · 185 citations

Materials Engineering, Electrical Engineering, 6H-silicon Carbide Devices +4

MBE Growth and Properties of ZnO on Sapphire and SiC Substrates

Mark A. Johnson, Shizυo Fujita, W. H. Rowland et al. · 1995 · 171 citations

Materials Engineering, Materials Science, Aluminium Nitride +8