B.J. Edward

Microwave power SiC MESFETs and GaN HEMTs

A.P. Zhang, L.B. Rowland, E.B. Kaminsky et al. · Solid-State Electronics · 2003 · 49 citations

Engineering, Electrical Engineering, Materials Science +14

9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55 V drain bias

A.P. Zhang, L.B. Rowland, E.B. Kaminsky et al. · Electronics Letters · 2003 · 33 citations

Engineering, Electrical Engineering, Materials Science +17

V-band, space-based phased arrays

J. Kinzel, B.J. Edward, D. Rees · MiJo · 1987 · 19 citations

Engineering, Aerospace Engineering, Electrical Engineering +10

W-band active transmit and receive phased array antennas

B.J. Edward, Domenik Helms, Richard Webb et al. · 2002 · 16 citations

Engineering, Electrical Engineering, Materials Science +15

Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance

A. P. Zhang, L.B. Rowland, E.B. Kaminsky et al. · Journal of Electronic Materials · 2003 · 10 citations

Engineering, Electrical Engineering, Materials Science +14