A. Saxler - Concepedia

Author

A. Saxler

Also Known As

A. SAXLER, A. Saxler, A. W. Saxler, A.W Saxler, A.W. Saxler, Adam Saxler, Adam W. Saxler, Adam William Saxler, Antonio Saxler, Saxler, A.

112

Publications

4.6K

Citations

H-Index

Concepts

All Affiliations

Quantum Devices (United States)Northwestern University United States Air Force Research Laboratory Wright-Patterson Air Force Base Wolfspeed, Inc. (United States)

About

A. Saxler is an author at Quantum Devices (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	46	4.3K
2	Applied Physics	28	45	4.2K
3	Natural Sciences	3	3	170
4	Chemistry	3	3	315
5	Chemical Engineering	1	1	48

A. Saxler

Publications

4.4K

Citations

H-Index

Page 1

	Year	Citations
30-W/mm GaN HEMTs by Field Plate Optimization Yifeng Wu, A. Saxler, M. Moore, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringField PlatesRf Semiconductor	2004	1.1K
Heavy doping effects in Mg-doped GaN P. Kozodoy, Huili Grace Xing, Steven P. DenBaars, Journal of Applied Physics Materials ScienceP-type Mg-doped GanElectrical EngineeringWide-bandgap SemiconductorEngineering	2000	403
40-W/mm Double Field-plated GaN HEMTs Yifeng Wu, M. Moore, A. Saxler, Electrical EngineeringEngineeringApplied PhysicsGan Power DeviceCategoryiii-v Semiconductor	2006	337
AlGaN ultraviolet photoconductors grown on sapphire D. Walker, X. Zhang, Patrick Kung, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineeringPhotochemistry	1996	181
High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates Patrick Kung, A. Saxler, X. Zhang, Applied Physics Letters Wide-bandgap SemiconductorAluminium NitrideEngineeringSilicon SubstratesGan Films	1995	166
Polarization-enhanced Mg doping of AlGaN/GaN superlattices P. Kozodoy, Y. Smorchkova, Monica Hansen, Applied Physics Letters Materials ScienceAluminium NitrideElectrical EngineeringWide-bandgap SemiconductorPolarization-enhanced Mg Doping	1999	162
Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition K. S. Kim, A. Saxler, Patrick Kung, Applied Physics Letters Materials EngineeringSemiconductorsMaterials ScienceAlinn TernaryOptical Absorption Spectroscopy	1997	120
Al x Ga 1−x N (0<b>⩽</b>x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition D. Walker, X. Zhang, A. Saxler, Applied Physics Letters Short Wavelength OpticEngineeringOptoelectronic DevicesChemistryPhotoelectric Sensor	1997	116
Visible blind GaN <i>p-i-n</i> photodiodes D. Walker, A. Saxler, Patrick Kung, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesOptical MaterialsEngineering	1998	111
A crystallographic model of (00⋅1) aluminum nitride epitaxial thin film growth on (00⋅1) sapphire substrate C. J. Sun, Patrick Kung, A. Saxler, Journal of Applied Physics Materials ScienceAluminium NitrideCrystallographic ModelEngineeringCrystalline Defects	1994	102

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