A. Saxler

30-W/mm GaN HEMTs by Field Plate Optimization

Yifeng Wu, A. Saxler, M. Moore et al. · IEEE Electron Device Letters · 2004 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

Heavy doping effects in Mg-doped GaN

P. Kozodoy, Huili Grace Xing, Steven P. DenBaars et al. · Journal of Applied Physics · 2000 · 414 citations

Engineering, Materials Engineering, Materials Science +17

40-W/mm Double Field-plated GaN HEMTs

Yifeng Wu, M. Moore, A. Saxler et al. · 2006 · 339 citations

Engineering, Electrical Engineering, Materials Science +12

AlGaN ultraviolet photoconductors grown on sapphire

D. Walker, X. Zhang, Patrick Kung et al. · Applied Physics Letters · 1996 · 181 citations

Engineering, Electrical Engineering, Materials Science +17

High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

Patrick Kung, A. Saxler, X. Zhang et al. · Applied Physics Letters · 1995 · 166 citations

Engineering, Materials Engineering, Materials Science +14