W.L. Pribble

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

S.T. Sheppard, K. Doverspike, W.L. Pribble et al. · IEEE Electron Device Letters · 1999 · 535 citations

Wide-bandgap Semiconductor, Record Performance, Electrical Engineering +10

Applications of SiC MESFETs and GaN HEMTs in power amplifier design

W.L. Pribble, John W. Palmour, S.T. Sheppard et al. · 2003 · 82 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Wide bandgap semiconductor devices and MMICs for RF power applications

John W. Palmour, S.T. Sheppard, R.P. Smith et al. · 2002 · 79 citations

Engineering, Radio Frequency, High Power Densities +16

Thermal analysis and its application to high power GaN HEMT amplifiers

A. Prejs, Simon M. Wood, Raymond S. Pengelly et al. · 2009 · 64 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +16

Progress in high power SiC microwave MESFETs

Scott T. Allen, W.L. Pribble, R.A. Sadler et al. · 2003 · 46 citations

Electrical Engineering, Sic Devices, Engineering +13