2002 · 203 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsCurrent DensityDoped SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesGan-based High-frequency DevicesHigh-electron-mobility TransistorsMicrowave Devices
The progress of AlGaN/GaN based HEMTs is reviewed. The mobility achieved in these modulation doped structures is over 1500 cm/sup 2/ V/sup -1/ s/sup -1/ at 300 K with sheet densities of over 1/spl times/1013 cm/sup -2/. Ft of over 50 GHz and fmax of over 90 GHz has been demonstrated. Power density of over 2.6 W/mm at 10 GHz has been achieved.
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Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V
Yifeng Wu, S. Keller, P. Kozodoy et al. · IEEE Electron Device Letters · 1997 · 181 citations
Measured microwave power performance of AlGaN/GaN MODFET
Yifeng Wu, B.P. Keller, S. Keller et al. · IEEE Electron Device Letters · 1996 · 151 citations