R. Therrien

12 W/mm AlGaN–GaN HFETs on Silicon Substrates

J. W. Johnson, E. L. Piner, Andrei Vescan et al. · IEEE Electron Device Letters · 2004 · 221 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +9

Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

B. S. Kang, S. Kim, F. Ren et al. · Applied Physics Letters · 2004 · 116 citations

Pressure-induced Changes, Membrane Structure, Electrical Engineering +13

AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates

J.D. Brown, R. Borges, E. L. Piner et al. · Solid-State Electronics · 2002 · 114 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +5

Electrical detection of deoxyribonucleic acid hybridization with AlGaN∕GaN high electron mobility transistors

B. S. Kang, S. J. Pearton, J. J. Chen et al. · Applied Physics Letters · 2006 · 94 citations

Engineering, Dna Analysis, Molecular Biology +19

Reliability of large periphery GaN-on-Si HFETs

Sameer Singhal, T. Li, A. Chaudhari et al. · Microelectronics Reliability · 2006 · 87 citations

Electrical Engineering, Engineering, Applied Physics +2