A. Chaudhari - Concepedia

Author

A. Chaudhari

G.S. Science, Arts And Commerce College ORCID

Also Known As

A L Chaudhari, A. Chaudhari, A. L. Chaudhari, A.L. CHAUDHARI, A.L. Chaudhari, Amrat Chaudhari, Apurva Chaudhari, Ashim Chaudhari, Atul Chaudhari, Atul R. Chaudhari

Publications

465

Citations

H-Index

Concepts

All Affiliations

G.S. Science, Arts And Commerce College

About

A. Chaudhari is an author at G.S. Science, Arts And Commerce College specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	400
2	Applied Physics	4	4	151
3	Chemistry	3	3	143
4	Chemical Engineering	1	1	11
5	Computer Engineering	1	1	17

A. Chaudhari

Publications

424

Citations

H-Index

Page 1

	Year	Citations
Synthesis of Cu Doped ZnO Nanoparticles: Crystallographic, Optical, FTIR, Morphological and Photocatalytic Study Prakash K. Labhane, V. R. Huse, L. B. Patle, Journal of Materials Science and Chemical Engineering Materials ScienceEngineeringMetal NanoparticlesNanomaterialsNanotechnology	2015	116
Reliability of large periphery GaN-on-Si HFETs Sameer Singhal, T. Li, A. Chaudhari, Microelectronics Reliability Electrical EngineeringEngineeringApplied PhysicsGan Power DeviceSemiconductor Device	2006	87
Multi-wavelength optical fiber liquid refractometry based on intensity modulation A. Chaudhari, A. D. Shaligram Sensors and Actuators A Physical PhotonicsEngineeringOptical Transmission SystemOptical PropertiesIntensity Modulation	2002	55
150 W GaN-on-Si RF Power Transistor W. Nagy, Sameer Singhal, R. Borges, IEEE MTT-S International Microwave Symposium Digest, 2005. Electrical EngineeringDpd LinearizerEngineeringRf SemiconductorPower Device	2005	50
A 36mm GaN-on-Si HFET producing 368W at 60V with 70% drain efficiency R. Therrien, Sameer Singhal, J. W. Johnson, Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorNanoelectronics	2006	34
GaN-On-Si Reliability: A Comparative Study Between Process Platforms Sameer Singhal, A. Chaudhari, A.W. Hanson, ReliabilityActivation EnergyElectrical EngineeringReliability EngineeringEngineering	2006	17
Band edge movement and structural modifications in transition metal doped TiO<sub>2</sub>nanocrystals for the application of DSSC L. B. Patle, V. R. Huse, A. Chaudhari Materials Research Express EngineeringInorganic PhotochemistrySolid-state ChemistryPhoto-electrochemical CellTransition Metal Ion	2017	16
Qualification and Reliability of a GaN Process Platform Sameer Singhal, A. Chaudhari, P. Rajagopal,	2007	14
Performance of AlGaN/GaN HFETs fabricated on 100mm silicon substrates for wireless basestation applications J. Brown, W. Nagy, Sameer Singhal, Wide-bandgap SemiconductorEngineeringSilicon SubstratesGaas FetsPower Electronics	2004	14
Structural Analysis of Cu Doped TiO 2 Nanoparticles using Williamson-Hall Method L. B. Patle, Prakash K. Labhane, V. R. Huse, International Journal of Scientific Research in Science Engineering and Technology Williamson-hall MethodEngineeringWilliamson Hall AnalysisNanoheterogeneous CatalysisChemistry	2015	11

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