J. Novák

Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis

R. Stoklas, D. Gregušová, J. Novák et al. · Applied Physics Letters · 2008 · 107 citations

Engineering, Electrical Engineering, Materials Science +17

Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor

P. Kordoš, D. Gregušová, R. Stoklas et al. · Applied Physics Letters · 2007 · 88 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis

P. Kordoš, R. Stoklas, D. Gregušová et al. · Applied Physics Letters · 2009 · 80 citations

Engineering, Electrical Engineering, Materials Science +17

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

D. Gregušová, R. Stoklas, Ch. Mizue et al. · Journal of Applied Physics · 2010 · 57 citations

Engineering, Materials Engineering, Materials Science +17

Transport properties of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 of different thickness

P. Kordoš, D. Gregušová, R. Stoklas et al. · Solid-State Electronics · 2008 · 53 citations

Engineering, Electrical Engineering, Materials Science +16