Applied Physics Letters · 2007 · 88 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsCarrier Transport MechanismsGate OxidesHeterostructure Field-effect TransistorsHeterostructure TransistorsPassivationSeries ResistanceTransconductanceTransport In Heterostructures
The authors report on improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs). It is found that the drift mobility in the MOSHFET structures with 4nm thick Al2O3 gate oxide is significantly higher than that in HFETs. The zero-bias mobilities are 1950 and 1630cm2∕Vs for the MOSHFET and HFET, respectively. An ∼40% increase of the saturation drain current in the MOSHFETs compared to the HFETs seems to be larger than expected from the passivation effects. The MOSHFET devices show a higher transconductance (with peak values of ∼115mS∕mm) than the HFETs (∼70mS∕mm). Analysis of the device performance indicates a decrease of the parasitic series resistance together with an enhancement of the effective velocity of the channel electrons in the MOSHFET devices.
16
Tomás Palacios, Siddharth Rajan, A. Chakraborty et al. · IEEE Transactions on Electron Devices · 2005 · 209 citations
Hot-phonon-induced velocity saturation in GaN
B. K. Ridley, W. J. Schaff, L.F. Eastman · Journal of Applied Physics · 2004 · 98 citations