K. Čičo

Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor

P. Kordoš, D. Gregušová, R. Stoklas et al. · Applied Physics Letters · 2007 · 88 citations

Oxide Heterostructures, Zero-bias Mobilities, Electrical Engineering +10

Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors

G. Pozzovivo, J. Kuzmı́k, S. Golka et al. · Applied Physics Letters · 2007 · 76 citations · Full text

Electrical Engineering, Semiconductor Device, Engineering +9

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al₂O₃ gate oxide

D. Gregušová, R. Stoklas, K. Čičo et al. · Semiconductor Science and Technology · 2007 · 68 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +11

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

Clemens Ostermaier, G. Pozzovivo, J.‐F. Carlin et al. · IEEE Electron Device Letters · 2009 · 64 citations · Full text

Semiconductors, Hemt Access Region, Electrical Engineering +15

Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility Transistors

M. Ťapajna, N. Killat, V. Palankovski et al. · IEEE Transactions on Electron Devices · 2014 · 42 citations · Full text

Semiconductors, Hot-electron Temperature, Electrical Engineering +11