G. Pozzovivo

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

J. Kuzmı́k, G. Pozzovivo, Clemens Ostermaier et al. · Journal of Applied Physics · 2009 · 101 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors

G. Pozzovivo, J. Kuzmı́k, S. Golka et al. · Applied Physics Letters · 2007 · 76 citations · Full text

Electrical Engineering, Semiconductor Device, Engineering +9

MOCVD of HfO₂ and ZrO₂ high-<i>k</i> gate dielectrics for InAlN/AlN/GaN MOS-HEMTs

S. Abermann, G. Pozzovivo, J. Kuzmı́k et al. · Semiconductor Science and Technology · 2007 · 75 citations · Full text

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

Clemens Ostermaier, G. Pozzovivo, J.‐F. Carlin et al. · IEEE Electron Device Letters · 2009 · 64 citations · Full text

Semiconductors, Hemt Access Region, Electrical Engineering +15

Short-wavelength intersubband electroabsorption modulation based on electron tunneling between GaN∕AlN coupled quantum wells

L. Nevou, N. Kheirodin, Maria Tchernycheva et al. · Applied Physics Letters · 2007 · 58 citations

Categoryquantum Electronics, Optical Materials, Quantum Photonics +19