Concepedia
Statistics
Publications
23
Citations
833
H-Index
18
Active since
2007
Affiliations
TU Wien(Current)
École Polytechnique Fédérale de Lausanne
Institute of Electrical Engineering of the Slovak Academy of Sciences
Slovak Academy of Sciences
Slovak University of Technology in Bratislava
G. Pozzovivo is an author at TU Wien specializing in engineering, materials science, and semiconductor devices.
Publications per year
2007–2014
Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors
J. Kuzmı́k, G. Pozzovivo, Clemens Ostermaier et al. · Journal of Applied Physics · 2009 · 101 citations · Full text
Engineering, Electrical Engineering, Materials Science +17
Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors
G. Pozzovivo, J. Kuzmı́k, S. Golka et al. · Applied Physics Letters · 2007 · 76 citations · Full text
MOCVD of HfO<sub>2</sub> and ZrO<sub>2</sub> high-<i>k</i> gate dielectrics for InAlN/AlN/GaN MOS-HEMTs
S. Abermann, G. Pozzovivo, J. Kuzmı́k et al. · Semiconductor Science and Technology · 2007 · 75 citations · Full text
Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation
Clemens Ostermaier, G. Pozzovivo, J.‐F. Carlin et al. · IEEE Electron Device Letters · 2009 · 66 citations · Full text
Gate‐lag and drain‐lag effects in (GaN)/InAlN/GaN and InAlN/AlN/GaN HEMTs
J. Kuzmı́k, J.‐F. Carlin, M. Gonschorek et al. · physica status solidi (a) · 2007 · 58 citations · Full text
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