Clemens Ostermaier

Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs

P. Lagger, Clemens Ostermaier, Gregor Pobegen et al. · 2012 · 133 citations

Wide-bandgap Semiconductor, Electrical Engineering, Capture Emission Time +13

Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments

P. Lagger, Maria Reiner, D. Pogány et al. · IEEE Transactions on Electron Devices · 2014 · 108 citations

Comprehensive Study, Wide-bandgap Semiconductor, Electrical Engineering +13

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

J. Kuzmı́k, G. Pozzovivo, Clemens Ostermaier et al. · Journal of Applied Physics · 2009 · 101 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +11

On the Origin of the $C_{\text{oss}}$ -Losses in Soft-Switching GaN-on-Si Power HEMTs

Mattia Guacci, Morris Heller, Dominik Neumayr et al. · IEEE Journal of Emerging and Selected Topics in Power Electronics · 2018 · 84 citations

Wide-bandgap Semiconductor, Electrical Engineering, Unprecedented Performance Potential +13

Photonic crystal slab quantum well infrared photodetector

S. Kalchmair, Hermann Detz, Garrett D. Cole et al. · Applied Physics Letters · 2011 · 73 citations

Photonics, Quantum Photonics, Engineering +12