D. Pogány - Concepedia

Author

D. Pogány

Also Known As

D Pogany, D. POGANY, D. Pogany, D. Pogány, Dionyz Pogany, Dionýz Pogany, Dorina Gréta Pogány, Kuzmik, J., Pogany, D., Pogany, Dionyz

257

Publications

3.8K

Citations

H-Index

Concepts

All Affiliations

TU Wien Infineon Technologies (Germany)Institute of Electrical Engineering of the Slovak Academy of Sciences Slovak Academy of Sciences École Polytechnique Fédérale de Lausanne

About

D. Pogány is an author at TU Wien specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	34	98	3.2K
2	Applied Physics	33	79	2.7K
3	Electrical Engineering	33	91	2.9K
4	Computer Engineering	5	5	122
5	Chemical Engineering	1	1	11

D. Pogány

111

Publications

3.4K

Citations

H-Index

Page 1

	Year	Citations
InAlN/GaN HEMTs: a first insight into technological optimization J. Kuzmı́k, A. Kostopoulos, J.‐F. Carlin, IEEE Transactions on Electron Devices Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2006	136
Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs P. Lagger, Clemens Ostermaier, Gregor Pobegen, Wide-bandgap SemiconductorElectrical EngineeringCapture Emission TimeEngineeringPhysics	2012	133
Pump-Controlled Directional Light Emission from Random Lasers Thomas Hisch, Matthias Liertzer, D. Pogány, Physical Review Letters Emission PatternPhotonicsOptical PumpingEngineeringLaser Science	2013	123
Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments P. Lagger, Maria Reiner, D. Pogány, IEEE Transactions on Electron Devices Comprehensive StudyWide-bandgap SemiconductorElectrical EngineeringEngineeringBias Temperature Instability	2014	108
Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors J. Kuzmı́k, G. Pozzovivo, Clemens Ostermaier, Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	2009	101
Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$ Gianmauro Pozzovivo, S. Abermann, Jean-François Carlin, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringNanoelectronics	2008	96
Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes S. Bychikhin, D. Pogány, L.K.J. Vandamme, Journal of Applied Physics PhotonicsElectrical EngineeringSolid-state LightingEngineeringGan Leds	2005	85
Transient Thermal Characterization of AlGaN/GaN HEMTs Grown on Silicon J. Kuzmı́k, S. Bychikhin, Martin Neuburger, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringPulsed OperationEngineeringPhysics	2005	85
Gate insulation and drain current saturation mechanism in InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors G. Pozzovivo, J. Kuzmı́k, S. Golka, Applied Physics Letters Electrical EngineeringSemiconductor DeviceEngineeringVelocity SaturationNanoelectronics	2007	76
MOCVD of HfO<sub>2</sub> and ZrO<sub>2</sub> high-<i>k</i> gate dielectrics for InAlN/AlN/GaN MOS-HEMTs S. Abermann, G. Pozzovivo, J. Kuzmı́k, Semiconductor Science and Technology	2007	75

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