D. Pogány

InAlN/GaN HEMTs: a first insight into technological optimization

J. Kuzmı́k, A. Kostopoulos, J.‐F. Carlin et al. · IEEE Transactions on Electron Devices · 2006 · 136 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +13

Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs

P. Lagger, Clemens Ostermaier, Gregor Pobegen et al. · 2012 · 133 citations

Wide-bandgap Semiconductor, Electrical Engineering, Capture Emission Time +13

Pump-Controlled Directional Light Emission from Random Lasers

Thomas Hisch, Matthias Liertzer, D. Pogány et al. · Physical Review Letters · 2013 · 123 citations · Full text

Emission Pattern, Photonics, Optical Pumping +13

Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments

P. Lagger, Maria Reiner, D. Pogány et al. · IEEE Transactions on Electron Devices · 2014 · 108 citations

Comprehensive Study, Wide-bandgap Semiconductor, Electrical Engineering +13

Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

J. Kuzmı́k, G. Pozzovivo, Clemens Ostermaier et al. · Journal of Applied Physics · 2009 · 101 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +11