Maria Reiner

Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments

P. Lagger, Maria Reiner, D. Pogány et al. · IEEE Transactions on Electron Devices · 2014 · 108 citations

Comprehensive Study, Wide-bandgap Semiconductor, Electrical Engineering +13

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

P. Lagger, P. Steinschifter, Maria Reiner et al. · Applied Physics Letters · 2014 · 66 citations

Semiconductors, High Density, Electrical Engineering +14

Review of bias-temperature instabilities at the III-N/dielectric interface

Clemens Ostermaier, P. Lagger, Maria Reiner et al. · Microelectronics Reliability · 2018 · 39 citations

Electrical Engineering, Engineering, Bias Temperature Instability +6

Chemical understanding and utility of H₃PO₄ etching of group‐III‐ nitrides

Maria Reiner, Marcus Reiss, Thorge Brünig et al. · physica status solidi (b) · 2015 · 14 citations · Full text

Materials Science, Inorganic Chemistry, Boron Nitride +11

Degradation of AlGaN-based metal-semiconductor-metal photodetectors

Moritz Brendel, Sylvia Hagedorn, Frank Brunner et al. · Japanese Journal of Applied Physics · 2019 · 12 citations

Aluminium Nitride, Electrical Engineering, Photoluminescence +13