P. Lagger

Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs

P. Lagger, Clemens Ostermaier, Gregor Pobegen et al. · 2012 · 133 citations

Wide-bandgap Semiconductor, Electrical Engineering, Capture Emission Time +13

Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments

P. Lagger, Maria Reiner, D. Pogány et al. · IEEE Transactions on Electron Devices · 2014 · 108 citations

Comprehensive Study, Wide-bandgap Semiconductor, Electrical Engineering +13

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

P. Lagger, P. Steinschifter, Maria Reiner et al. · Applied Physics Letters · 2014 · 66 citations

Semiconductors, High Density, Electrical Engineering +14

Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

Mattia Capriotti, P. Lagger, Clément Fleury et al. · Journal of Applied Physics · 2015 · 49 citations · Full text

Semiconductor Technology, Electrical Engineering, Engineering +13

Review of bias-temperature instabilities at the III-N/dielectric interface

Clemens Ostermaier, P. Lagger, Maria Reiner et al. · Microelectronics Reliability · 2018 · 39 citations

Electrical Engineering, Engineering, Bias Temperature Instability +6