Mattia Capriotti

Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

Mattia Capriotti, P. Lagger, Clément Fleury et al. · Journal of Applied Physics · 2015 · 49 citations · Full text

Semiconductor Technology, Electrical Engineering, Engineering +13

Fixed interface charges between AlGaN barrier and gate stack composed of <i>in situ</i> grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

Mattia Capriotti, A. Alexewicz, Clément Fleury et al. · Applied Physics Letters · 2014 · 42 citations · Full text

Wide-bandgap Semiconductor, Gate Stack, Electrical Engineering +13

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Clément Fleury, Mattia Capriotti, M. Rigato et al. · Microelectronics Reliability · 2015 · 37 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure

Matteo Meneghini, Oliver Hilt, Clément Fleury et al. · Microelectronics Reliability · 2015 · 27 citations

Normally-off Gan-hemts, Electrical Engineering, Engineering +5

Nucleation of Ga droplets on Si and SiO_<i>x</i>surfaces

Hermann Detz, Martin Kříž, Donald MacFarland et al. · Nanotechnology · 2015 · 24 citations · Full text