A. Alexewicz

Fixed interface charges between AlGaN barrier and gate stack composed of <i>in situ</i> grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

Mattia Capriotti, A. Alexewicz, Clément Fleury et al. · Applied Physics Letters · 2014 · 42 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

K. Čičo, D. Gregušová, J. Kuzmı́k et al. · Solid-State Electronics · 2011 · 19 citations

Engineering, Electrical Engineering, Materials Science +16

Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates

A. Alexewicz, Clemens Ostermaier, Christoph Henkel et al. · Thin Solid Films · 2012 · 16 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors

P. Marko, A. Alexewicz, Oliver Hilt et al. · Applied Physics Letters · 2012 · 13 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors

S. Vitanov, C. Dua, J.‐F. Carlin et al. · Japanese Journal of Applied Physics · 2012 · 13 citations

Engineering, Electrical Engineering, Materials Science +17