Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

R. Vetury, N.Q. Zhang, S. Keller et al. · IEEE Transactions on Electron Devices · 2001 · 1.4K citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +16

Power electronics on InAlN/(In)GaN: Prospect for a record performance

J. Kuzmı́k · IEEE Electron Device Letters · 2001 · 559 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

M. Gonschorek, J.‐F. Carlin, E. Feltin et al. · Applied Physics Letters · 2006 · 316 citations · Full text

Materials Science, Al0.82in0.18n∕gan Material System, Electrical Engineering +11

Capacitance–Voltage Characteristics of Al₂O₃/AlGaN/GaN Structures and State Density Distribution at Al₂O₃/AlGaN Interface

Chihoko Mizue, Yujin Hori, Marcin Miczek et al. · Japanese Journal of Applied Physics · 2011 · 239 citations

Semiconductors, Aluminium Nitride, Electrical Engineering +13

Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques

Takeyoshi Onuma, Shigefusa F. Chichibu, Akira Uedono et al. · Journal of Applied Physics · 2004 · 92 citations

Localized Excitons, Aluminium Nitride, Optical Materials +18