M. Jurkovič

Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

M. Ťapajna, M. Jurkovič, L. Válik et al. · Applied Physics Letters · 2013 · 62 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

M. Ťapajna, M. Jurkovič, L. Válik et al. · Journal of Applied Physics · 2014 · 54 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Schottky-barrier normally off GaN/InAlN/AlN/GaN HEMT with selectively etched access region

M. Jurkovič, D. Gregušová, V. Palankovski et al. · IEEE Electron Device Letters · 2013 · 39 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth

D. Gregušová, M. Jurkovič, Š. Haščı́k et al. · Applied Physics Letters · 2014 · 34 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +13

Self‐aligned normally‐off metal–oxide–semiconductor n⁺⁺GaN/InAlN/GaN high electron mobility transistors

M. Blaho, D. Gregušová, Š. Haščı́k et al. · physica status solidi (a) · 2015 · 27 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10