L. Válik

Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors

M. Ťapajna, M. Jurkovič, L. Válik et al. · Applied Physics Letters · 2013 · 62 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Impact of GaN cap on charges in Al2O3/(GaN/)AlGaN/GaN metal-oxide-semiconductor heterostructures analyzed by means of capacitance measurements and simulations

M. Ťapajna, M. Jurkovič, L. Válik et al. · Journal of Applied Physics · 2014 · 54 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Self-Heating in GaN Transistors Designed for High-Power Operation

M. Ťapajna, L. Válik, Marián Molnár et al. · IEEE Transactions on Electron Devices · 2014 · 51 citations

Electrical Engineering, Engineering, Transient Self-heating +14

Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

M. Ťapajna, L. Válik, Filip Gucmann et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2016 · 25 citations

Materials Science, Semiconductors, Electrical Engineering +15

Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

D. Gregušová, Filip Gucmann, R. Kúdela et al. · Applied Surface Science · 2016 · 12 citations

Electrical Engineering, Engineering, Applied Physics +3