R. Vetury - Concepedia

Author

R. Vetury

Advanced Micro Devices (United States)

Also Known As

R. Vetury, Rama Vetury, Vetury, R., Wang

Publications

Citations

H-Index

Concepts

All Affiliations

Advanced Micro Devices (United States)University of California, Santa Barbara United States Air Force Research Laboratory North Carolina State University Wright-Patterson Air Force Base

About

R. Vetury is an author at Advanced Micro Devices (United States) specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	23	2.6K
2	Electrical Engineering	17	22	2.6K
3	Applied Physics	16	20	2.8K
4	Materials Science	2	2	41
5	Materials Engineering	1	1	16

R. Vetury

Publications

2.9K

Citations

H-Index

Page 1

	Year	Citations
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs R. Vetury, N.Q. Zhang, S. Keller, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringPower ElectronicsSemiconductor DeviceVirtual Gate	2001	1.4K
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringCrystalline Defects	1999	433
Anisotropic epitaxial lateral growth in GaN selective area epitaxy D. Kapolnek, S. Keller, R. Vetury, Applied Physics Letters Wide-bandgap SemiconductorEpitaxial GrowthApplied PhysicsGan Power DeviceLateral Growth	1997	299
Current instabilities in GaN-based devices I. Daumiller, D. Théron, Christophe Gaquière, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPhysics	2001	150
Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers Z.-Q. Fang, B. Claflin, D. C. Look, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2010	107
Nonlinear source resistance in high-voltage microwave AlGaN/GaN HFETs R.J. Trew, Yueying Liu, L. S. Bilbro, IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorElectrical EngineeringSemiconductor DeviceEngineeringField-effect Transistors	2006	97
Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability D.S. Green, Shawn R. Gibb, Brook Hosse, Journal of Crystal Growth Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2004	40
452 MHz Bandwidth, High Rejection 5.6 GHz UNII XBAW Coexistence Filters Using Doped AlN-on-Silicon Yuhua Shen, Pinal Patel, R. Vetury, Aluminium NitrideEngineeringAcoustic MetamaterialElectromagnetic CompatibilityAluminum Nitride	2019	39
High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications R. Vetury, Ying Wei, D.S. Green, IEEE MTT-S International Microwave Symposium Digest, 2005. Wide-bandgap SemiconductorEngineeringPower ElectronicsRf SemiconductorField Modulation Plates	2005	38
GaN HEMT thermal behavior and implications for reliability testing and analysis Daniel S. Green, Bharath Vembu, David Hepper, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ReliabilityWide-bandgap SemiconductorElectrical EngineeringReliability EngineeringEngineering	2008	33

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