Clément Fleury

Self-Heating in GaN Transistors Designed for High-Power Operation

M. Ťapajna, L. Válik, Marián Molnár et al. · IEEE Transactions on Electron Devices · 2014 · 51 citations

Electrical Engineering, Engineering, Transient Self-heating +14

Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states

Mattia Capriotti, P. Lagger, Clément Fleury et al. · Journal of Applied Physics · 2015 · 49 citations · Full text

Semiconductor Technology, Electrical Engineering, Engineering +13

Fixed interface charges between AlGaN barrier and gate stack composed of <i>in situ</i> grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability

Mattia Capriotti, A. Alexewicz, Clément Fleury et al. · Applied Physics Letters · 2014 · 42 citations · Full text

Wide-bandgap Semiconductor, Gate Stack, Electrical Engineering +13

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Clément Fleury, Mattia Capriotti, M. Rigato et al. · Microelectronics Reliability · 2015 · 37 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7

Imaging condition for nonlinear scattering-based imaging: Estimate of power loss in scattering

Clément Fleury, Ivan Vasconcelos · Geophysics · 2012 · 34 citations