C. Dua

Testing the Temperature Limits of GaN-Based HEMT Devices

David Maier, M. Alomari, N. Grandjean et al. · IEEE Transactions on Device and Materials Reliability · 2010 · 150 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, High Temperature Stability +8

InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment

David Maier, M. Alomari, N. Grandjean et al. · IEEE Electron Device Letters · 2012 · 108 citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

Mustapha Faqir, G. Verzellesi, Alessandro Chini et al. · IEEE Transactions on Device and Materials Reliability · 2008 · 100 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

W. Chikhaoui, Jean‐Marie Bluet, M. A. Poisson et al. · Applied Physics Letters · 2010 · 84 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +12

Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress

A. Sozza, C. Dua, E. Morvan et al. · 2006 · 84 citations

Wide-bandgap Semiconductor, Engineering, Energy Efficiency +17