Concepedia
Statistics
Publications
33
Citations
1.2K
H-Index
19
Active since
1999
Affiliations
III V Lab(Current)
Thales (France)
Centre National de la Recherche Scientifique
Institut d'électronique de microélectronique et de nanotechnologie
University of Padua
C. Dua is an author at III V Lab specializing in semiconductor devices, engineering, and electrical engineering.
Publications per year
1999–2019
Testing the Temperature Limits of GaN-Based HEMT Devices
David Maier, M. Alomari, N. Grandjean et al. · IEEE Transactions on Device and Materials Reliability · 2010 · 155 citations · Full text
Engineering, Electrical Engineering, Materials Science +17
InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment
David Maier, M. Alomari, N. Grandjean et al. · IEEE Electron Device Letters · 2012 · 114 citations · Full text
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors
Mustapha Faqir, G. Verzellesi, Alessandro Chini et al. · IEEE Transactions on Device and Materials Reliability · 2008 · 101 citations · Full text
Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage
W. Chikhaoui, Jean‐Marie Bluet, M. A. Poisson et al. · Applied Physics Letters · 2010 · 85 citations
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot-electron stress
A. Sozza, C. Dua, E. Morvan et al. · 2006 · 85 citations
Engineering, Electrical Engineering, Physics +14
1–5 of 33