Mustapha Faqir - Concepedia

Author

Mustapha Faqir

International University of Rabat ORCID

Also Known As

Faqir, M., Faqir, Mustapha, M Faqir, M. FAQIR, M. Faqir, Mustapha Faqir, Mustapha faqir

102

Publications

Citations

H-Index

Concepts

All Affiliations

International University of Rabat University of Modena and Reggio Emilia University of Bristol University of Padua Université de Bordeaux

About

Mustapha Faqir is an author at International University of Rabat specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	673
2	Applied Physics	9	9	479
3	Electrical Engineering	9	9	479
4	Chemical Engineering	2	2	42
5	Chemistry	1	1	22

Mustapha Faqir

Publications

695

Citations

H-Index

Page 1

	Year	Citations
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs Mustapha Faqir, G. Verzellesi, Gaudenzio Meneghesso, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2008	137
Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors Mustapha Faqir, G. Verzellesi, Alessandro Chini, IEEE Transactions on Device and Materials Reliability Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPhysics	2008	100
AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes Martin Kuball, M. Ťapajna, R. Simms, Microelectronics Reliability Wide-bandgap SemiconductorElectrical EngineeringEngineeringDiffusion ProcessesDegradation Evolution	2010	85
Performance characterization of a direct evaporative cooling pad based on pottery material Azzeddine Laknizi, Abdellatif Ben Abdellah, Mustapha Faqir, International Journal of Sustainable Engineering EngineeringEnergy EfficiencyMechanical EngineeringThermal ProcessingSorption Cooling	2019	37
Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier N. Killat, M. Ťapajna, Mustapha Faqir, Electronics Letters Wide-bandgap SemiconductorDrift-diffusion SimulationsElectrical EngineeringEngineeringPhysics	2011	36
Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs Mustapha Faqir, G. Verzellesi, F. Fantini, Microelectronics Reliability Electrical EngineeringEngineeringAluminum Gallium NitrideApplied PhysicsGan Power Device	2007	35
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Microelectronics Reliability Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2010	28
Numerical investigation of the effect of punch corner radius and die shoulder radius on the flange earrings for AA1050 and AA1100 aluminum alloys in cylindrical deep drawing process Kenza Bouchaâla, Mohamad Fathi Ghanameh, Mustapha Faqir, Heliyon Materials ScienceLightweight MaterialsEngineeringPunch Corner RadiusMechanical Engineering	2021	27
Improved thermal management for GaN power electronics: Silver diamond composite packages Mustapha Faqir, Tim Batten, T. Mrotzek, Microelectronics Reliability Wide-bandgap SemiconductorElectrical EngineeringEngineeringPower DeviceApplied Physics	2012	23
Banana Fiber Extraction and Surface Characterization of Hybrid Banana Reinforced Composite Nasr Bekraoui, Zakaria El Qoubaa, Hajar Chouiyakh, Journal of Natural Fibers Materials ScienceSurface CharacterizationFiber ReinforcementReinforcement MaterialEngineering	2022	23

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