Gregor Pobegen

Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs

Thomas Aichinger, Gerald Rescher, Gregor Pobegen · Microelectronics Reliability · 2017 · 262 citations

Engineering, Electrical Engineering, Materials Science +16

Analytic modeling of the bias temperature instability using capture/emission time maps

Tibor Grasser, P.-J. Wagner, H. Reisinger et al. · 2011 · 179 citations

Engineering, Systems Engineering, Fault Tolerance +11

Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs

P. Lagger, Clemens Ostermaier, Gregor Pobegen et al. · 2012 · 134 citations

Engineering, Electrical Engineering, Materials Science +17

On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs

Gerald Rescher, Gregor Pobegen, Thomas Aichinger et al. · 2016 · 76 citations

Engineering, Electrical Engineering, Circuit Theory +16

The ‘permanent’ component of NBTI: Composition and annealing

Tibor Grasser, Th. Aichinger, Gregor Pobegen et al. · 2011 · 72 citations

Engineering, Electrical Engineering, Materials Science +17