Gregor Pobegen

Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs

Thomas Aichinger, Gerald Rescher, Gregor Pobegen · Microelectronics Reliability · 2017 · 244 citations

Electrical Engineering, Engineering, Physics +5

Analytic modeling of the bias temperature instability using capture/emission time maps

Tibor Grasser, P.-J. Wagner, H. Reisinger et al. · 2011 · 175 citations

Engineering, Earth Science, Reliability Engineering +18

Towards understanding the origin of threshold voltage instability of AlGaN/GaN MIS-HEMTs

P. Lagger, Clemens Ostermaier, Gregor Pobegen et al. · 2012 · 133 citations

Wide-bandgap Semiconductor, Electrical Engineering, Capture Emission Time +13

On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETs

Gerald Rescher, Gregor Pobegen, Thomas Aichinger et al. · 2016 · 74 citations

4H-sic Nmosfets, Electrical Engineering, Engineering +10

The ‘permanent’ component of NBTI: Composition and annealing

Tibor Grasser, Th. Aichinger, Gregor Pobegen et al. · 2011 · 71 citations

Engineering, Power Electronics, Defect Tolerance +16