Thomas Aichinger

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

Tibor Grasser, Ben Kaczer, Wolfgang Goes et al. · IEEE Transactions on Electron Devices · 2011 · 462 citations

Engineering, Switching Oxide Traps, Reaction–diffusion Mechanism +18

Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs

Thomas Aichinger, Gerald Rescher, Gregor Pobegen · Microelectronics Reliability · 2017 · 244 citations

Electrical Engineering, Engineering, Physics +5

Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability

Katja Puschkarsky, Tibor Grasser, Thomas Aichinger et al. · IEEE Transactions on Electron Devices · 2019 · 189 citations

Reliability, Threshold Voltage Instabilities, Electrical Engineering +12

Performance and ruggedness of 1200V SiC — Trench — MOSFET

Dethard Peters, Ralf Siemieniec, Thomas Aichinger et al. · 2017 · 145 citations

Electrical Engineering, Semiconductor Device, Engineering +10

Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation

Katja Puschkarsky, H. Reisinger, Thomas Aichinger et al. · IEEE Transactions on Device and Materials Reliability · 2018 · 105 citations

Electrical Engineering, Semiconductor Device, Engineering +14